Precursors:
Ru(EtCp)2, O2 or N2/H2 plasma
Applications
Barrier layer, e.g Cu diffusion barrier
Metal electrode
GPC 0.38Å/cycle @ 350°C
Resistivity ~15µ ohm cm
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"OpAL" for
Atomic Layer Deposition
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Why remote plasma ALD ?
A "remote plasma" makes sure, the substrates
are NOT in contact with the plasma !
The remote plasma just cracks molecules,
so that very reactive species can be used for
the growth process.
Such reactive species often enable a very
efficient plasma preclean of the substrates,
lead to cleaner films and lower the deposition
temperature.
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