Plasmalab System 100
ICP- RIE, with loadlock

OPT application lab:
30 µm diameter Al2O3 lens

Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
13.56 MHz Plasma Excitation
RF driven substrate ectrode
Cl based process

Al2O3 etch rate : 100 - 300 nm/ min
good uniformity: +/- 2.5 % (2“)
very smooth surface

ICP schematic