Plasma Technology  

OPT application lab:
80° wall etching in sapphire


Plasmalab System 100
ICP- RIE, with loadlock


OPT application lab:
1.5 µm deep Al2O3 etch

Sapphire (Al2O3) ICP Etching


Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
13.56 MHz Plasma Excitation
RF driven substrate ectrode

Al2O3 etch rate : 65 nm/ min
selectivity to Ni mask > 7 : 1
good uniformity: +/- 2.5 % (2“)
anisotropic profile (80° walls)
smooth etched sidewalls


ICP schematic



OPT application lab:
anisotropic profile

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