OPT application lab: 
50 nm lines and spaces
etched 200 nm deep in Si

50 nm lines/ spaces

etch rate 60/ 40 nm/ min

selectivity to underlaying SiO2 > 200 : 1

anisotropic profile

HBr based 2 step process

etch depth up to 1 µm
at 5 : 1 aspect ratio

ICP Technology

OPT application lab: 
100 nm lines and spaces etched in Si

Plasmalab System 100
with ICP380