OPT application lab:
anisotropic 8 µm deep etch

Reactive Ion Etching
with Inductive Coupled Plasma Source (ICP)

Plasmalab System 100
with ICP380 sources

Technology:
He backside cooling
room temperature process
single step process

Results:
Rate : 0.5 µm/min
Uniformity: < +/- 1% (4“)
vertical wall
smooth surface
selectivity to Resist > 8:1
selectivity to SiO2 > 20:1

OPT application lab:
anisotropic 8 µm deep etch

OPT application lab:
anisotropic 5 µm deep etch