SF6 process at - 70° C

SF6 process at + 10 ° C

Plasmalab 80 Plus

10 µm deep anisotopic etching

RIE technology
with wide temperature range electrode
and Helium backside cooling

Plasmalab 80 Plus
Plasmalab System 100

Parallel Plate Configuration
RIE Mode (13.56 MHz)
substrate electrode: -150 - +400 °C
Thermal Contact: Helium

etch rate ~0.3µm/min (dependent on Si area)
etch rate uniformity < ± 4% (100 mm wafer)
selectivity to positive photoresist >3-6:1
(dependent on resist type)
selectivity to silicon dioxide ~5-10:1
undercut ~0%
profile 87-90°