40 µm deep Si etch

Reactive Ion Etching with ICP source

Plasmalab System 100
with loadlock and ICP180 source

45 µm deep Si etch

-> show gas chopping principle

Rate : 2 - 3 µm/ min (ICP 180)
Rates up to 10 µm/ min are possible
with the larger ICP 380 source.
Selectivity to Photoresist > 100 : 1
Selectivity to SiO2 > 200 : 1
uniformity over 4“ wafer: +/- 4 %
highly anisotropic profile

with kind permission of:
  Uni Kassel
  Technische Physik
  Dr I Rangelow

55 µm deep Si etch