70 µm long Si needles etched
by the low temperature process

Plasmalab System 100
with loadlock and ICP180 source

Reactive Ion Etching
with ICP source

Technology:
Reactive Ion Etching
Inductive Coupled Plasma Source
low temperature “cryo” process
He backside cooling

Results:
Rate : 2.5 µm/min
selectivity to SiO2 150 - 350 : 1
anisotropic etch
controllable wall profile