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Reactive Ion Etching
with ICP source
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Plasmalab System 100
with loadlock and ICP180 source
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"Lab-on-a-chip":
Silicon nitride channels buried in a silicon wafer.
The process involves cryogenic silicon etching,
followed by an isotropic silicon etch (which does
not attack the sidewalls as they are still passivated).
Finally, a silicon nitride film is deposited by LPCVD
to close up the hole.
Plasmalab System 100/ 133 (Cluster)
Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
substrate temperature control
with kind permission of:
TU Twente
Meint de Boer
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