Plasma Technology  

SEM

OPT application lab:
100 µm deep etch

Deep Si Etching at room temperature: the "Bosch" process

Technology:
Reactive Ion Etching
Inductive Coupled Plasma Source
room temperature process
He backside cooling


ICP technology

SEM

OPT Application lab:
80 µm high aspect ratio etch

Results:
Rate : up to 10 µm/min
Uniformity: < +/- 2/ 3 % (4/ 6“)
anisotropic etch
aspect ratio up to 30 : 1
controllable wall profile
high selectivity to Resist (> 75:1)
and SiO2 (> 150:1)

Plasmalab System 100
with loadlock and ICP180

SEM

OPT application lab:
75 µm deep etch

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