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-> show gas chopping principle
Technology:
Reactive Ion Etching
Inductive Coupled Plasma Source
room temperature process
He backside cooling
"Bosch process" with gas chopping:
isotropic etch/ polymer formation
Results:
Rate : up to 10 µm/min
Uniformity: < +/- 2/ 3 % (4/ 6“)
anisotropic etch
aspect ratio up to 30 : 1
controllable wall profile
high selectivity to Resist (> 75:1)
and SiO2 (> 150:1)
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