180 µm deep, 15 µm wide vias at
1.94 µm/ min, selectivity to SiO₂ 130:1

60 µm deep, 3 µm wide at 2.47 µm/min,
selectivity to resist 48:1

Technology:
Reactive Ion Etching
Inductive Coupled Plasma Source
room temperature “Bosch” process
He backside cooling

Results:
Rate : 1 - 10 µm/ min depending on the aspect ratio
Uniformity: < + 2/ 3 % (4/ 6“)
anisotropic etch
aspect ratio up to 30 : 1
controllable wall profile
high selectivity to Resist (> 75:1)

Deep Si Etch (70 µm) with excellent wall profile control:
positive slope for different aspect ratios

System 100Cluster
with ICP Souces and Cassette

ICP layout