50 µm deep etch at high aspect ratios

Courtesy of Keith Ritala
Microfabrication Laboratory
Washington Technology Center

optimised conditions for both steps by "gas chopping"

Technology:
Reactive Ion Etching
Inductive Coupled Plasma Source
room temperature “Bosch” process
He backside cooling

Results:
Rate : 1 - 5 µm/min
Rates up to 10 µm/ min are possible
with the ICP 380 source.
anisotropic etch
aspect ratio up to 30 : 1
controllable wall profile

Si tips for field emission arrays
or AFM

250 µm deep anisotropic etch

Plasmalab System 100
with ICP Souce and loadlock

ICP layout