stress vs 13 MHz power
PECVD technology
Equipment: Plasmalab 80 Plus/ 800 Plus Plasmalab System 100/ 133
Technology: Parallel Plate Reactor Shower Head Gas inlet SiH4 based process
Results: Rate : > 50 nm/min Uniformity: ± 4 % over 200 mm Reproducibility: ± 2 % Stress: < 150 MPa Refractive Index: ca 2.6 (2.4 - 2.7) Good wet etch rate resistance