Cluster-Tool, Plasmalab System 100
Application:
UMOS-Structures with rounded edge profile
Examples for trench etching in hexagonal
silicon carbide (6H-SiC). The maximum
etch rate was 248 nm/min, the trench depth
is 3.3 µm. The rounded edges were created
with an isotropic/anisotropic structured mask
of deposited silicon dioxide (SiO2).
Source:
RWTH Aachen, Institute of
Semiconductor Electronics (IHT II),
Oliver Hellmund
Acknowledgement:
The work was supported by the German Ministry
of Education and Research and the Siemens AG,
ZT EN 6, Erlangen under Grant 01 BM 701/5.
*The ICP technology has replaced the ECR technology
used at Aachen
in 1994 - 1997, see ICP vs ECR. |
SEMs by RWTH Aachen |
 OPT
application lab
anisotropic ICP etch of 2 µm SiC
Ni mask not removed
OPT application lab
15 µm SiC using an PR mask (SU8)
at 220 nm/ min, profile 85°
ICP
anisotropic etch
rate: 200 - 400 nm/ min
Ni, Al or ITO mask
selectivity: 5 - 40 : 1
selectivity to SU-8: > 0.5 : 1
uniformity over 4": < ± 3 %
smooth bottom and walls |
