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OPT application lab:
10 µm deep etch at > 83° wall angle
> 0.3 µm/ min etch rate
selectivity to SU8 > 0.5 : 1
no trenching
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OPT application lab:
3 µm deep, isotropic SiC etch |
Equipment:
Plasmalab 80 Plus
Plasmalab System 100/ 133 (Cluster)
Technology:
Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
substrate temperature control
Fluorine based process
SiC backside thinning works from
2 µm/ min for single wafers up to
0.35 µm/ min for large batches (12 3" wafer)
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