SiGe multilayer film at 450° C

Process Chemistry : SiH4, GeH4
Deposition Rate : 50 - 200 nm/min 

The advantage of PECVD vs CVD is
the higher depostion rate.

The advantage of polySiGe over
polySi is the lower transition
temperature of 450° C vs 580° C.

courtesy of IMEC
Proc. IEEE MEMS, p 721-724 (2004)

10 µm thick SiGe showing
excellent contact hole filling

Plasmalab System 100

PECVD polycrystalline SiGe by
multilayer process at 450° C
(100 nm amorphous PECVD SiGe seed
layer to avoid the long incubation time on
SiO2/ CVD SiGe crystallisation seed layer
for subsequent low temperature
polycrystalline PECVD SiGe growth)

film resistivity 1 m ohm cm
contact resistivity SiGe/Al
  between 6×10-6 -9×10-5 ohm cm2
stress - 5 MPa

CVD SiGe can be grown at 450° C
at just 20 nm/ min !

PECVD microcrystalline SiGe can be deposited
at 300° - 400° C with 10 - 20 nm/ min.

IMEC proprietary and patented process

resistivity vs annealing temperature