OPT application lab:
conformal SiN deposition in source-gate and
source-drain contacts of GaAs - FET's

PECVD technology

Plasmalab 80 Plus

top SEM: courtesy of FZ Juelich, ISI:
70 nm SiN over a 2 µm step
(with underetched wall)

OPT application lab:
conformal deposition of 1 µm SiN
over a 0.9 µm 85° step

OPT application lab:
conformal deposition of 30 nm SiN
in high aspect ratio holes

conformal deposition over overhanging step

lower KOH and BHF wet etch rates at higher temperatures

low pinhole density

excellent uniformity over full batches

Rate : 3 - 30 nm/ min (controllable)

Uniformity: + 3 %

Reproducibility: ca. + 2%

Refractive Index: 1.90 - 2.10 (controllable)

Stress: small tensile stress (< 10⁹ dynes/cm²)
fully controllable with frequency mixing

Adhesion on Si, GaAs: excellent

Breakthrough voltage: 4 x 10⁶ V/cm

Dielectric constant: ca. 7 (at 1 MHz)