conformal deposition of
0.6 µm Si3N4 over a step

Absorbance versus wavenumber:
FTIR curve for NH3-free nitride showing low N-H content

Plasmalab System 133

Plasmalab 800 Plus

Deposition temperature 250 - 350°C
Deposition rate 7 - 12 nm/min
Refractive index 2.00
Film thickness variation (across table) < ± 3%
Film thickness variation (run to run) < ± 2%
Refractive index variation (across table) < ± 1%
Refractive index variation (run to run) < ± 1%
Etch rate (1:20 HF:DI water) < 20 nm/min *
Breakdown voltage > 8.5 MV/cm
stress < 50 MPa with frequency mixing

* at 330° C, higher temperature processes provide lower
BHF etch rate, but are not recommended for
InP based wafers.

Suitable for 330° C PECVD onto InP layers.
Produces stable film properties even at low deposition
temperature (ca 100° C).
Stress control available using optional dual frequency
(high and low) technique.

PECVD