Plasma Technology

SiN can be deposited by:

parallel plate PECVD
(13 MHz/ 81 MHz)

Plasmalab 800 Plus
stand alone system for up
to 30 cm x 30 cm substrates

SiN can also be deposited by
"remote plasma" PECVD.

The "remote" plasma only
cracks the molecules in a region
"remote" from the substrate.

SiN PECVD for solar cell passivation

Equipment:
Plasmalab 80 Plus/ 800 Plus
Plasmalab System 100/ 133

Results:
Rate : 10 - 20 nm/min
Uniformity: +/- 3 - 4 %
Reproducibility: +/- 2.5 %
Refractive index tuneable 1.9 – 2.2

SiN surface passivation
with lifetimes > 1ms
on p-Type FZ- Silicon (1 Ohm cm)

System 100 Pro
Square or hexagonal transfer station
with up to 3 or 5 process modules
(PECVD, TCO Sputtering, ALD)