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Plasma Technology |
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SiO2 PECVD |
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Strain control of films is of very high importance for the fabrication of microstructures by bulk and surface micromachining. The key parameter to control the material strain of films deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) is the plasma excitation frequency, which influences the ion bombardment energy. The behaviour of the mechanical stress of thin dielectric films e.g. silicon nitride and silicon dioxide using frequency interlacing of 130 KHz (low frequency) and 13,56 MHz (high frequency) was studied. Stress control was achieved between tensile 40 MPa) and compressive (+120 MPa) approaching zero stress as close as 5 MPa. |
PECVD |
with kind permission Dr.-Ing. J. Daleiden, A. Tarraf, Prof. H. Hillmer |
