SiO₂ Etching

RIE

Fluor based process

etch rates: 10 - 300 nm/ min

selectivity to Si: 5 - 15 : 1

Mask: Photoresist

OPT Application lab:
2 µm deep via holes
wall angle for reliable metalisation

9 µm deep highly anisotropic etch profile

OPT Application lab:
9 µm deep anisotropic etch
photoresist mask removed

Fluor based process

etch rates: > 0.5 µm/ min

low bias process possible

Mask: Photoresist or metal

OPT Application lab:
8 µm deep high rate waveguide etch

OPT Application lab:
30 µm diameter lens etched into
quartz at > 150 nm/ min

Ar through the RF source

CxFy through ring or RF source

etch rates: 30 nm/ min - 200 nm/ min

wall angle adjustable by tilt

Courtesy of Uni Jena:
250 nm deep SiO2 RIBE etch

OPT Application lab:
3.5 µm deep etch
selectivity to polyimide: 2 : 1

Courtesy of Uni Jena:
5 µm deep anisotropic quartz RIBE