Dr Fuchs uses his Ionfab 300 for ion beam etching
and deposition. The system is configured with
a filamentfree 15 cm ECR etch source and a
3 cm Kaufman source for deposition.

The photo and graph show the Ionfab 300 Plus
with RF sources, which has replaced the
Ionfab 300 installed in Jena.

with kind permission of:
Uni Jena, Inst. fuer Angewandte Physik, Dr J Fuchs

Process steps (with ion beam technology):
(a) Cr ion beam deposition
(b) ion beam etching of the Cr mask
(c) RIBE of the quartz

OPT Application Lab:
3.5 µm deep SiO₂ CAIBE etch
with polyimide mask, > 85° slope

Uni Jena:
2.5 µm deep anisotropic quartz etch

IBE/ RIBE/ CAIBE
technologies

Uni Jena:
2.5 µm deep anisotropic quartz etch

Ionfab 300 Plus