Dr Fuchs uses his Ionfab 300 for ion beam etching
and deposition. The system is configured with
a filamentfree etch source and a 3 cm Kaufman
source for deposition.

The photo and graph show the Ionfab 300 Plus
with RF sources, which has replaced the
Ionfab 300 installed in Jena.

with kind permission of:
Uni Jena, Inst. fuer Angewandte Physik,
Dr J Fuchs

250 nm deep SiO₂ RIBE etch

250 nm deep SiO₂ RIBE etch

IBE/ RIBE/ CAIBE
technologies

Reactive Ion Beam Etching "RIBE"
Reactive gases are introduced into filamentless sources.

The etch process was performed with the substrate holder under an angle of 25° to the beam, no sample rotation.

Fluorine based process chemistry

Rate: > 50 nm/ min
Mask: 50 nm Cr (patterend by RIE)

The wall angle can be adjusted by varying the substrate holder angle with respect to the beam.

Ionfab 300 Plus