Plasma Technology  

SEM

OPT application lab:
230 nm lines, 300 nm gaps, 1 µm deep
PR removed in an O2 plasma step


RIE technology


Plasmalab 80 Plus

SiO2 RIE with aspect ratio 5 : 1 linewidth 200 nm


SEM

8 µm deep SiO2 turbine
Courtesy of Uni Kassel


SEM

OPT application lab:
400 nm wide contact hole, 1 µm deep
PR removed in an O2 plasma step


SEM

OPT application lab:
anisotropc etch of 1 µm deep SiO2
PR still in place


Etch Rates:
30 - 50 nmn/ min with PR mask
100 nm/ min with PR mask and He cooling
higher with hard masks

Selectivity to Photoresist: 3 - 10 : 1

anisotrop profile

smooth walls

selectivity to underlaying  Si  5 - 12 : 1

uniformity ± 4 % (6" wafer)

run to run over large batches ± 3 %


SEM

controlled sloped profiles are possible
for example for via hole etching


SEM

4 µm deep SiO2 RIE
at 5 : 1 aspect ratio
selectivity to photoresist: 5 : 1
(1µm UVIIHS08 Resist, SHIPLEY)
Courtesy of Uni Kassel

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