OPT application lab:
230 nm lines, 300 nm gaps, 1 µm deep
PR removed in an O2 plasma step

RIE technology

Plasmalab 80 Plus

8 µm deep SiO2 turbine
Courtesy of Uni Kassel

OPT application lab:
400 nm wide contact hole, 1 µm deep
PR removed in an O2 plasma step

OPT application lab:
anisotropc etch of 1 µm deep SiO2
PR still in place

Etch Rates:
30 - 50 nmn/ min with PR mask
100 nm/ min with PR mask and He cooling
higher with hard masks

Selectivity to Photoresist: 3 - 10 : 1

anisotrop profile

smooth walls

selectivity to underlaying  Si  5 - 12 : 1

uniformity ± 4 % (6" wafer)

run to run over large batches ± 3 %

controlled sloped profiles are possible
for example for via hole etching

4 µm deep SiO2 RIE
at 5 : 1 aspect ratio
selectivity to photoresist: 5 : 1
(1µm UVIIHS08 Resist, SHIPLEY)
Courtesy of Uni Kassel