Refractive index reproducibility |
|
Rate: 100 - 400 nm/ min
Uniformity over 4”/6”/8”: + 1 / 1.5/ 3 %
SiH4 based PECVD
Doping by Ge, B, P
Rate Reproducibility: +/- 1.5 %
Refractive Index: 1.46 - 1.49
Stress: < 100 MPa compr. (as depodited)/
< 200 MPa after anneal
low N-H content for low losses at 1550 nm
Index Uniformity: ± 0.001 after PECVD,
± 0.0002 after anneal
Chamber cleaning by plasma only
Plasma Clean Interval > 100 µm
|
optical emission signal
for the plasma clean process |
