anisotropic etch through several layers

ICP - RIE technology

Plasmalab 80 Plus
with ICP65 source

anisotropic etch on an 8" wafer
(using the ICP 380)

typical results with the ICP 65 (on chips):

Technology:

Reactive Ion Etching
with ICP Source (2 or 13 MHz)
Inductive Coupled Plasma 
RF driven substrate electrode

Results:

anisotropic profile
clean etch surface
low ion induced damage
suitable for 5 level metalisation
little attack of the Al lines

laser end point trace - etching TEOS then Coral
to expose the underlaying layer
red line = signal, blue line = first derivative

Polyimide
rate > 100 nm/ min
selectivity to SiN > 15 : 1

SiN depassivation
rate 100 nm/ min
selectivity to TEOS and SiC 1.5 : 1

SiC
rate up to 140 nm/ min
selectivity to TEOS 1.4 : 1
to low k dielectrics 0.7 : 1

SiO ILD (BPSG, TEOS)
rate up to 100 nm/ min
selectivity to low k dielectrics 0.5 : 1
0.7 : 1 to SiC

SiOC:H low k dielectrics
('Coral', 'Black Diamond')
rate up to 180 nm/ min
selectivity to TEOS 2 : 1
1.3 : 1 to SiC

'silk' spin on resist
rate up tp 400 nm/ min

Plasmalab System 100
with loadlock and ICP380 source

anisotropic etch

anisotropic etch on an 8" wafer
at low ion induced damage