PECVD of Dielectrics

PECVD

SiH₄, NH₃, N₂O based processes

Refractive index: 1.46 - 2.20 (SiO_xN_y)

wide range of applications

excellent uniformity over large batches

OPT Application lab:
2 µm SiO₂
over an overhanging feature

Courtesy of IMO Wetzlar
1.5 µm low stress Si₃N₄
over a 1.5 µm step

10 µm BPSG after single
tep anneal (950 °C)

HDP - PECVD

SiH₄, N₂ bases processes for SiN

low deposition temperatures

compatible with lift off technology

ICP ("High Density Plasma")

OPT Application lab:
400 nm Si₃N₄
over a 3 µm step at < 100° C

SiO2 / Si3N4 mulilayer
deposited over a 5 micron step
ICP - PECVD

Remote PECVD

SiH₄, N₂O bases processes for SiO₂

low damage process

plasma not in contact with the substrate

ICP configured as remote source

Courtesy of RWTH Aachen
200 nm SiO₂
with very high electrical quality