OPT application lab, Yatton:
4 µm deep, anisotropic
SiO2/ TiO2 multilayer RIE

RIE technology

Plasmalab 80 Plus
with laser interferometer

Reactive Ion Etching (RIE)
13.56 MHz Plasma Excitation

Rate : 40 nm/min
(65 nm/ min for SiO2/Ta2O5)
Uniformity: +/- 4 %
Selectivity to PR mask: 0.8 :1
(1.1 : 1 for SiO2/ Ta2O5)