OPT application lab:
SiO2-Si stack, side wall roughness / ripple < 6.7 nm

Plasmalab System 100
with ICP380 sources

Technology:
He backside cooling
room temperature process
single step process

Results:
- F-based ICP chemistry
- rate > 200 nm/ min
- selectivity to Ni mask > 100:1
- Sidewall roughness / ripple < 7 nm
- uniformity < +/- 5%

Reactive Ion Etching
with Inductive Coupled Plasma Source (ICP)

OPT application lab:
after 3µm stack etch, 22nm Ni mask remaining