Si emitter array of 25.000 tips
by dry etching with gas chopping
after oxidation and etching

etched at - 50° C using gas chopping
tip radii of 2 - 10 nm possible
after oxidation sharpening

Plasmalab System 100
with ICP source
and vacuum loadlock

self aligned volcano-type gate field emitter
coated with ICP-PECVD DLC

Si emitter array of 25.000 tips
by dry etching with gas chopping
after oxidation and etching

Incuctive Coupled Plasma
(ICP)

with kind permission of:
  Uni Kassel
  Technische Physik