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ICP sources
ICP 65 for pieces and small wafer
ICP 180 for up to 4" - 6" wafers
ICP 380 for up to 6" - 8" wafers
-> show gas chopping principle
Results:
Rate : 1µm/ min by ICP180
Rates up to 10 µm/ min are possible
with the larger ICP 380 source.
uniformity over 4" wafer ± 4%(ICP180)
selectivity to SiO2 underneath > 100: 1
SEM's supplied by an OPT user
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three step Bosch process |
Equipment:
Plasmalab System 80 Plus
Plasmalab System 100/ 133 (Cluster)
Technology:
Reactive Ion Etching
with ICP Source (13.56 MHz)
Inductive Coupled Plasma
RF driven substrate electrode
substrate temperature control
Fluorine based 3 step process
gas chopping
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