> 200 nm photonic crystal holes
in Ta2O5 using a ZEP520 mask

> 500 nm deep Ta2O5 Etch with Cr mask

Ta2O5 Etch with PR mask, depth > 1 µm

1 µm deep Ta2O5 etch at 130°C with Cr mask,
90° but slight undercut at top

Technology:
ICP - RIE
F based process

Results:
- Etch Rate                         > 80 nm/ min
- Uniformity                       < +/- 5%
- Selectivity PR mask        > 1:1
- Selectivity Cr mask         > 8:1
- Profile                              > 75º

Inductive Coupled Remote Plasma

Plasmalab 80 Plus
with cover for the ICP65

Plasmalab System 100:
(cluster with ICP and RIE)