Titanium reflectivity vs. thickness
for films deposited at low temperature

Titanium resistivity vs. thickness
for films deposited at low temperature

magnetron sputtering

Equipment:
Plasmalab System 400
(max 4 200 mm targets)

Technology:
Magnetron Sputtering
rotating table
DC magnetron

Results:
Resistivity 70 µ ohm cm (400 nm layer)
Reflectivity (@436 nm relative to Si)
  > 115 % (500 nm layer)
rate: 30 nm/ min (rotating)
uniformity: +/- 5 % (6” wafer)
rate: 300 nm/ min (static)

Plasmalab System 400
with vacuum loadlock