|
1 µm TiN/ 0.5 µm Si with resist mask
0.25 µm TiN/ 0.3 µm Si without resist
0.25 µm TiN/ 0.3 µm Si with resist
Low Pressure - RIE
Parallel Plate Reactor
13.56 MHz Plasma Excitation
Shower Head Gas Inlet
Process Gas: Fluorine based
anisotropic profile
Rate: 25 nm/ min
Mask used here: trilevel resist
Courtesy of the University of Bochum,
Lehrstuhl für Elektronische Bauelemente
(work done on an earlier OPT RIE model) |
90 nm line etched in TiN
etch rate > 100 nm/ min (ICP)
selectivity TiN : HSQ 2 - 3.5 : 1
overetch with very high selectivity
to gate oxide (up to 80 : 1)
uniformity over 150 mm < ± 3 %
Cl/ Br based process chemistry
Courtesy of AMO Aachen
M.C. Lemme, J.K. Efavi, T. Mollenhauer,
M. Schmidt, H.D.B. Gottlob, T. Wahlbrink,
H. Kurz, "Nanoscale TiN metal gate
technology for CMOS integration",
Microelectronic Engineering, 83(4-9):
1551-1554, 2006. |
