1 µm deep anisotropic etch
at 170 nm/ min and 1 : 1 selectivity to the PR mask

Plasmalab System 100
with loadlock and ICP380 source

Technology:
Reactive Ion Etching
Inductive Coupled Plasma Source
Helium backside cooling
very uniform temperature control over the whole wafer
F based process

Results:
rate : ca 200 nm/min
uniformity: < +/- 3 %
selectivity to PR mask 1 - 2 : 1

1.2 µm deep anisotropic etch
at 200 nm/ min and 2: 1 selectivity to the PR mask

ICP technology