Plasmalab System 100
with vacuum loadlock
and ICP 180 source

1 µm deep etch at 83°
OPT application lab, Yatton (UK)

Plasmalab 80 Plus
with ICP 65 source

ICP technology

Technology:
ICP - RIE
13 MHz Plasma Excitation
Parallel Plate Reactor

Results:
Rate : > 100 nm/ min
Uniformity: +/- 4 %
The mask can be SiO2, SiN, Ni or photoresist.