Plasmalab System 133
---Other Systems---
Plasmalab 80 Plus (E)
Plasmalab 80 Plus (D)
Plasmalab 80 Plus (R)
PlasmaPro NGP80 (E)
PlasmaPro NGP80 (D)
PlasmaPro NGP80 (R)
Plasmalab 800 Plus (E)
Plasmalab 800 Plus (D)
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Plasmalab System 100 (E)
Plasmalab System 100 (D)
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Nanofab (E)
System 100 Pro cluster/ cass(E)
System 100 Pro cluster/ cass (D)
System 100 Pro cluster/ cass (R)
PlasmaPro Estrelas 100 (E)
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Plasmalab System 133 (E)
Plasmalab System 133 (D)
Plasmalab System 133 (R)
PlasmaPro NGP1000 (E)
PlasmaPro NGP1000 (D)
PlasmaPro 1000 (R)
Ionfab 300 Plus (E)
Ionfab 300 Plus (D)
Ionfab 300 Plus (R)
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Ionfab 500 Plus (D)
Ionfab 500 Plus (R)
Plasmalab System 400 (E)
Plasmalab System 400 (D)
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FlexAL Atomic Layer Deposition (E)
FlexAL Atomic Layer Deposition (R)
OpAL Atomic Layer Deposition (E)
OpAL Atomic Layer Deposition (R)
BROCHURE as PDF file
---dimensions/ photos---
installation: top view
Download installation documents
---photos---
RIE 133 system
with ICP380 source
cluster with cassette, ICP380
clean room interfaces
Reactive Ion Etching : RIE
13.56 MHz driven parallel plate reactor
cooled substrate electrodes
shower head gas inlet optimised for RIE
high conductance vacuum layout
etch modes:
RIE
/
PE
/
ICP
Plasma Enhanced Chemical Vapour Deposition: PECVD
13.56 MHz driven parallel plate reactor
kHz and "frequency mixing" optional
shower head gas inlet optimised for
PECVD
400° C and 700° C substrate electrodes
Concept
PC Control
vacuum loadlock
330 mm electrodes
small footprint
fully clean room compatible
through the wall mounting
Options
transfer station (square or hexagonal)
vacuum cassette(s)
ICP sources with with
ESS
laser interferometry
/
optical emission
-> show load sequence