Plasmalab 800 Plus
---Other Systems---
Plasmalab 80 Plus (E)
Plasmalab 80 Plus (D)
Plasmalab 80 Plus (R)
Plasmalab 800 Plus (E)
Plasmalab 800 Plus (D)
Plasmalab 800 Plus (R)
Plasmalab System 100 (E)
Plasmalab System 100 (D)
Plasmalab System 100 (R)
Nanofab (E)
System 100 Pro cluster/ cass(E)
System 100 Pro cluster/ cass(D)
System 100 Pro cluster/ cass(R)
Plasmalab System 133 (E)
Plasmalab System 133 (D)
Plasmalab System 133 (R)
Ionfab 300 Plus (E)
Ionfab 300 Plus (D)
Ionfab 300 Plus (R)
Ionfab 500 Plus (E)
Ionfab 500 Plus (D)
Ionfab 500 Plus (R)
Plasmalab System 400 (E)
Plasmalab System 400 (D)
Plasmalab System 400 (R)
FlexAL Atomic Layer Deposition (E)
FlexAL Atomic Layer Deposition (R)
OpAL Atomic Layer Deposition (E)
OpAL Atomic Layer Deposition (R)
BROCHURE as PDF file
---dimensions/ photos---
Download installation documents
---photos---
with 300 mm wafer
with vacuum loadlock
Reactive Ion Etching : RIE
13.56 MHz driven parallel plate reactor
cooled electrode: 380 or 460 mm
shower head gas inlet optimised for RIE
high conductance vacuum layout
etch modes:
RIE
/
PE
Plasma Enhanced Chemical Vapour Deposition: PECVD
13.56 MHz driven parallel plate reactor
kHz and
"frequency mixing"
optional
substrate electrode: 460 mm
shower head gas inlet optimised for
PECVD
400° C substrate table
Concept
PC 2000 Control
"Master/ Slave" Concept:
RIE/PECVD
Master 800 Plus with Slave 80 Plus possible
low footprint
fully clean room compatible
capacity: 12 x 4" wafer, 7 x 6" wafer
