Plasmalab 800 Plus

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Reactive Ion Etching : RIE

  • 13.56 MHz driven parallel plate reactor
  • cooled electrode: 380 or 460 mm
  • shower head gas inlet optimised for RIE
  • high conductance vacuum layout
  • etch modes: RIE/ PE
Plasmalab 800 Plus/ 6 kB

Plasma Enhanced Chemical Vapour Deposition: PECVD

  • 13.56 MHz driven parallel plate reactor
  • kHz and "frequency mixing" optional
  • substrate electrode: 460 mm
  • shower head gas inlet optimised for PECVD
  • 400 C substrate table

Concept

  • PC Control
  • "Master/ Slave" Concept: RIE/PECVD
  • Master 800 Plus with Slave  80 Plus possible
  • low footprint
  • fully clean room compatible
  • capacity: 12 x 4" wafer, 7 x 6" wafer
Plasmalab 800 Plus with full batch loaded/ 5 kB