Plasmalab 80 Plus
---Other Systems---
Plasmalab 80 Plus (E)
Plasmalab 80 Plus (D)
Plasmalab 80 Plus (R)
PlasmaPro NGP80 (E)
PlasmaPro NGP80 (D)
PlasmaPro NGP80 (R)
Plasmalab 800 Plus (E)
Plasmalab 800 Plus (D)
Plasmalab 800 Plus (R)
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Plasmalab System 100 (D)
Plasmalab System 100 (R)
Nanofab (E)
System 100 Pro cluster/ cass(E)
System 100 Pro cluster/ cass (D)
System 100 Pro cluster/ cass (R)
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PlasmaPro Estrelas 100 (D)
PlasmaPro Estrelas 100 (R)
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Plasmalab System 133 (D)
Plasmalab System 133 (R)
PlasmaPro NGP1000 (E)
PlasmaPro NGP1000 (D)
PlasmaPro 1000 (R)
Ionfab 300 Plus (E)
Ionfab 300 Plus (D)
Ionfab 300 Plus (R)
Ionfab 500 Plus (E)
Ionfab 500 Plus (D)
Ionfab 500 Plus (R)
Plasmalab System 400 (E)
Plasmalab System 400 (D)
Plasmalab System 400 (R)
FlexAL Atomic Layer Deposition (E)
FlexAL Atomic Layer Deposition (R)
OpAL Atomic Layer Deposition (E)
OpAL Atomic Layer Deposition (R)
BROCHURE as PDF file
---dimensions/ photos---
installation: top view
Download installation documents
---photos---
with ICP65 source
with laser interferometer
with glovebox
Reactive Ion Etching : RIE
13.56 MHz driven parallel plate reactor
substrate electrode: 170 or 240 mm
shower head gas inlet optimised for RIE
high conductance vacuum layout
etch modes:
RIE
/
PE
/
ICP
wide temperature range electrode opt.
Plasma Enhanced Chemical Vapour Deposition: PECVD
13.56 MHz driven parallel plate reactor
kHz and
"frequency mixing"
optional
substrate electrode: 240 mm
shower head gas inlet optimised for PECVD
400° C and 700° C substrate tables
Options (RIE, PECVD)
Helium "cooling"
(thermal contact)
ICP65 source
with
ESS
laser interferometry
/
optical emission
Nitrogen Glove Box
Concept
PC Control
"Master/ Slave" Concept: RIE/ PECVD
large number of (retrofittable) options
small footprint
fully clean room compatible
1.000 systems (80/80 Plus) installed worldwide
