Reactive Ion Etching : RIE

• 13.56 MHz driven parallel plate reactor

• cooled electrodes: 275 mm

• shower head gas inlet optimised for RIE

• high conductance vacuum layout

• etch modes: RIE/ PE
  

• manual vacuum loadlock

• batch loading

• low footprint

• fully clean room compatible

• heavy substrates: max 2 kg, max 18 mm high (12 mm with Cassette loading)

Plasmalab System 90 Plus

Cassette version
(with ECR source)

Plasma Enhanced Chemical Vapour Deposition: PECVD

• 13.56 MHz driven parallel plate reactor

• kHz and "frequency mixing" optional

• heated substrate electrode: 275 mm

• shower head gas inlet optimised for PECVD

• 400° C and 700° C substrate tables