Reactive Ion Etching : RIE

• 13.56 MHz driven parallel plate reactor
• 60 MHz driven top electrode optional
• cooled electrode: 490 mm
• shower head gas inlet optimised for RIE
• high conductance vacuum layout
• etch modes: RIE/ PE

PlasmaPro NGP 100
with vacuum loadlock

carrier for 61 x 2" wafer

Plasma Enhanced Chemical Vapour Deposition: PECVD

• 13.56 MHz driven parallel plate reactor
• kHz and "frequency mixing" optional
• substrate electrode: 490 mm
• shower head gas inlet optimised for PECVD
• 400° C substrate table

Concept

• PC Control
• multichamber cluster tools available
• cassette handling optional
• small footprint
• fully clean room compatible
• capacity: 1 x 450 mm, 1x 300 mm wafer
  200 mm wafer: up to 3
  150 mm wafer: up to 7
  100 mm wafer: up to 15
    50 mm wafer: up to 61
  (The actual max laoding depends on the process
  and uniformity requirements.)

The NGP 100 is also availabe as a cluster tool
and/ or with cassette handling.