Reactive Ion Etching : RIE
- 13.56 MHz driven parallel plate reactor
- substrate electrode: 240 mm
- shower head gas inlet optimised for RIE
- high conductance vacuum layout
- etch modes: RIE/ PE/
ICP
- wide temperature range electrode optional
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PlasmaPro NGP80 |
Plasma Enhanced Chemical Vapour Deposition: PECVD
- 13.56 MHz driven parallel plate reactor
- kHz and "frequency mixing"optional
- substrate electrode: 240 mm
- shower head gas inlet optimised for PECVD
- 400° C and 700/ 800° C substrate tables
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