Nanofab700
Nanofab800Agile
The Nanofab700 and Nanofab800Agile deliver high
performance growth of nanotubes and nanowires
with in-situ catalyst activation and rigorous process
control.
Nanofab700: with 650° C table
Nanofab800Agile: with high agility 800°
C table
Metal organic precursor delivery for compound
semiconductor nanowires
Aligned carbon nanotube (CNT) growth
Wide range of nanowire materials
Si, Ge, ZnO, GaO, SiC, GaN, GaAs, GaP, InP, ZnS, InN
Proven repeatable processes
Control of length and diameters
Catalyst annealing
Improved catalyst activation by plasma treatment
Liquid precursor option
Plasma catalyst conditioning
Thermal Response for the Nanofab 800 Agile:
Flexible non-oxide nanowire and nanotube growth
up to 800°C agile heating and cooling for rapid
turnaround
A key advantage of Oxford Instruments’ technology
is the use of low thermal mass, shock resistant
materials, capable of high power densities.
Ramp rates for heating have been demonstrated
as high as 130 °C/minute using our custom
designed PBN plate based heater, while
conventional sintered ceramics are limited
to ~15 °C/minute.
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Nanofab800Agile
dual chamber system:
for example: Nanowire Growth
combined with ALD Deposition
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Plasma Enhanced Chemical Vapour Deposition: PECVD
- 13.56 MHz driven parallel plate reactor
- kHz and "frequency mixing" optional
- shower head gas inlet optimised for PECVD
Standard PECVD processes can be run in
the same system:
SiO2, Si3N4,
SiC, amorphous
Si,
polySi, SiGe
Concept
Options
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Si Nanowire Growth
Si nanowire growth by CVD
1 µm high, 33 nm diameter
grown at 400°C
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Carbon Nanotube Growth
CNT growth
with 13 MHz plasma at 650° C
onto a 5 nm Co catalyst seed layer
70 nm diameter, 1 µm height
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ZnO Nanowire Growth
Vertically aligned ZnO nanorods
on GaN-coated sapphire.
The nanorods have an average length of 400 nm.
The structures are catalysed by Au nanoparticles.
Courtesy of University of Cambridge
Department of Engineering
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