• typical process pressure: 100 - 1.000 mtorr
• no ion bombardment at the substrates

Typical Applications:

• low damage SiN deposition on solar cells
• low damage  deposition on 3-5's

"Inductive Coupled Plasma" with 13.56 MHz excitation

ICP is fully automatic (RF automatch unit)

"remote plasma"
no direct contact between the plasma and the substrate

older remote PECVD technology: MWDS

• lower (substrate) electrode grounded, RF driving opt.
• substrate electrode heated
• automatic height adjustment of the lower electrode opt.
• gas inlet through source and through distribution ring
• parameter: gas flows, pressure, source power, temperature
• plasma burns in the source only