• typical process pressure: 1- 10 mtorr
• plasma density: ca 5 x E¹¹ / cm²
• plasma in contact with the substrate
• low energy ion current during deposition
• Ion Current (Plasma Density) dependent on ICP power
• ESS (electrostatic screen) for a purely inductive plasma

Typical Applications:

• low temperature deposition for lift off technology
• low temperature deposition of very high quality SiO₂
• low temperature deposition of polySi

ICP was introduced in 1991- 1995 for plasma processing.

most important feature:
independent control of ion energy and ion current density

ICP is fully automatic (2 RF automatch units)

comparison: ICP vs the older ECR technology

• lower (substrate) electrode grounded, RF driving opt.
• substrate electrode cooled or heated
• automatic height adjustment of the electrode opt.
• gas inlet through source and through distribution ring
• high conductance pipework
• parameter: gas flows, pressure, source power, temperature