Typical Applications:

Ion Beam Etching (IBE):
Ar through source

• etching of noble metals as Au, Pt, Ag
• etching of resistors as NiCr
• HTS etching as YBCO
• substrate cleaning

Reactive Ion Beam Etching (RIBE):
Ar + X  through source

• anisotropic etching of organics
• etching of LiNbO₃

Chemically Assisted Ion Beam Etching (CAIBE):
Ar  through source + X through ring

• anisotropic etching laser mirrors (GaAs/ AlGaAs)
• anisotropic etching of InP and heterostructures

Sputteretch rates

Angle dependence of sputteretch rates

IBE system layout

• rotating and tiltable substrate holder
• thermal contact by He backside cooling
• Ion Sources: 3 - 38 cm , RF driven
• filamentfree PBN beam neutralisation
• gas inlet through source and through distribution ring
• high conductance pipework
• parameter: gas flows, ion energy, ion current, accelerator voltage, beam neutralisation
• second source and target cube for deposition optional