RIE, Dry Etching, Reactive Ion Etching, End Point Detection, Dual Beam Laser Interferometry

	Dual Beam Laser Interferometry

This special "dual beam" or "twin spot" laser interferometer is recommended
for in situ rate/ depth measurements for processes using switching between
etch and deposition processes.
It measures the etch depth from the phase shift and polarisation difference
between the two laser beams without the getting synchronisation signals
from the etch tool and extrapolating the actual etch depth from the rate.

single beam laser interferometry	GaAs/ AlGaAs heterostructure VCSEL RIE
dual beam laser interferometry	Laser Interferometry for Failure Analysis
AlGaN/ GaN ICP Etching	InP/ InGaAsP Laser Facet ICP Etching
SiGe RIE using a laser	Deep SiO2 Waveguide Etching by ICP
Polyimide Etching (RIE) for Failure Analysis	Laser CAIBE: InGaAs/ AlGaAs
GaAs/ AlGaAs DBR ICP Etching using Laser Interferometry	Plasmalab 80 Plus with laser mounted
optical emission	SiO2 via hole ething