• typical process pressure: 200 - 1.000 mtorr
• low ion energies ( 3 - 20 eV)
• standard method for low damage isotropic etch
• available as large batch system
• end point detection: optical emission, laser interferometry

PE system layout

Note:  The RIE and the PE mode can be combined with
           automatic switching in all OPT systems RIE/PE !

• isotropic low damage photoresist stripping
• isotropic SiN removal
• descuming (for masks)
• plasma cleaning

• substrate electrode on ground potential, cooled
• top electrode RF driven (13.56 MHz)
• shower head gas inlet (in the top electrode)
• parameter: gas flows, pressure, RF power