• typical process pressure: 1 - 100 mtorr
• plasma density: ca 5 x 10¹¹ / cm²
• RF ("self") bias forms at the substrate electrode
• Ion Energy (~ RF bias) dependent on the RF table power
• Ion Current (Plasma Density) dependent on ICP power

Typical Applications:

• low damage etching of 3-5's
• high rate anisotropic etch of Si for MEMS applications
• high rate SiO₂ etching
• sputter etching applications (Au, Pt)

effective electrostatic shielding to avoid the capacitive coupling
component (wall sputtering/ substrate bombardment)

current density vs ICP power with/ without
electrostatic screen (at 7 mtorr)

• lower (substrate) electrode RF driven
• substrate electrode cooled
• thermal contact by He backside cooling
• automatic height adjustment of the substrate electrode
• gas inlet through source and through distribution ring
• high conductance pipework
• parameter: gas flows, pressure, ICP power, table power

similar, older technology: ECR